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MRC | Criteria | Characteristic |
---|---|---|
TEXT | GENERAL CHARACTERISTICS ITEM DESCRIPTION | TEMP M55 TO P125 DEG CELCIUS; GALLIUM ARSENIDE INFRARED EMITTING DIODE,NPN SILICON PHOTOTRANSISTOR,HERMETICALLY SEALED; 0.370 IN. MAX DIA; 0.185 IN. MAX H; 0.600 IN. MAX TERMINAL LG |
4N200 | 4N201 | 4N2016 | 4N2040 |
4N2084 | 4N209 | 4N21 | 4N21 |
4N2104 | 4N21052-101A | 4N21052-101A | 4N21052-101A |
4N21052-103A | 4N21052 103A | 4N2109 | 4N2112 |
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