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MCT-276 Coupler Optoelectro by Quality Technologies L L C with NSN 5980-01-314-9673 - Buy Now!

Mfg Part Number: MCT-276

Alternate P/N:MCT276
Thank you for your interest in MCT-276 under FSC5980 Optoelectrical Devices and Associated Hardware NSN part on ASAP Global Supplies. Coupler Optoelectro is listed under the part number MCT-276, and it is manufactured by Quality Technologies L L C. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of MCT-276 Coupler Optoelectro NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5980013149673. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Quality Technologies L L C. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number MCT-276 with NSN 5980-01-314-9673, 5980013149673

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5980-01-314-9673

Item Description:

Coupler Optoelectro

59800131496730NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
Mct-276523

Characteristics Data of NSN 5980-01-314-9673, 5980013149673

MRCCriteriaCharacteristic
AFJQSTORAGE TEMP RANGE-55.0/+150.0 DEG CELSIUS
TEXTGENERAL CHARACTERISTICS ITEM DESCRIPTION6 PIN DUAL-IN LINE PKG; OPTICALLY COUPLED ISOLATOR; GALLIUM ARSENIDE INFRARED EMITTING DIODE WITH NPN SILICON PHOTOTRANSISTOR; 60.0 MA DIODE FORWARD CURRENT; 3.0 V DIODE REVERSE VOLTAGE; 0.330 IN. MIN TO 0.350 IN. MAX LG; 0.250 IN. MIN TO 0

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